Introduction Due to their unique properties, alternative 2D materials to graphene, 1 such as transition metal dichalcogenides (TMDCs) 2 as well as MXenes, 3,4 are attracting great interest. Hence, based on these results a straightforward processing pathway for the direct formation of MoB MBene-AlO x heterostructures without employing chemical etching is proposed here. Here, we report the direct formation of MoB MBene domains in a MoAlB thin film by Al deintercalation from MoAlB in the vicinity of AlO x regions. State-of-the-art processing strategies are based on chemical etching of bulk material synthesized via solid-state reaction at temperatures above 1000 ☌. ![]() Two-dimensional (2D) inorganic transition metal boride nanosheets are emerging as promising post-graphene materials in energy research due to their unique properties.
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